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20 questions
A semiconductor has generally ……………… valence electrons.
2
3
6
4
The forbiddenn energy gap for Germanium is of the order of
(a) 0.7 eV
(b) 0.3 eV
(c) 1.1 eV
(d) 10 eV
Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?
Boron
Arsenic
Indium
Gallium
Doping of Semiconductors
materials which can conduct electricity better than insulator, but not as well as conductors.
The process of adding of a certain amount of specific impurities atoms in the pure semiconductor.
when 4 electrons in outermost orbit.
The process of adding an impurity to an intrinsic semiconductor is called
Doping
Ionization
Recombination
Atomic modification
The minority carriers in P-type silicon are called _________________
Neutron
Proton
Electron
Hole
During formation of p-n junction
an electron diffuses from n to p side
a hole diffuses from p to n side
a hole diffuses from n to p side
an electron diffuses from p to n side
Which is not one of the properties of semiconductor?
4 electrons in outermost orbit, in covalent bonding.
atoms vibrate causes electron to break free from the bonds.
Electron free leaves hole.
Semiconductor has 2 types of charge carriers.
all of the above are the properties of it
Which among these is NOT a semiconductor
Germanium
Silicon
Gallium Arsenide
Titanium
Electrons and holes are equal in magnitude but opposite in polarity
True
False
An n type semiconductor is negatively charged
True
False
The forbidden energy gap for Silicon is of the order of
0.7 eV
0.3 eV
1.1 eV
10 eV
Who contribute to the current in a semiconductor
electrons only
holes only
negative ions
both electrons and holes
When a pentavalent impurity is added to a pure semiconductor, it becomes ………
An insulator
An intrinsic semiconductor
p-type semiconductor
n-type semiconductor
Addition of trivalent impurity to a semiconductor creates many ……..
Holes
Free electrons
Valence electrons
Bound electrons
The battery connections required to forward bias a pn junction are ……
+ve terminal to p and –ve terminal to n
-ve terminal to p and +ve terminal to n
-ve terminal to p and –ve terminal to n
None of the above
With forward bias to a pn junction , the width of depletion layer ………
Decreases
Increases
Remains the same
None of the above
At room temperature, an intrinsic semiconductor has ……….
Many holes only
A few free electrons and holes
Many free electrons only
No holes or free electrons
The term bias in electronics usually means ……….
the value of ac voltage in the signal.
the condition of current through a pn junction.
the value of dc voltages for the device to operate properly.
None of the above
The battery connections required to reverse bias a pn junction are ……
+ve terminal to p and –ve terminal to n
-ve terminal to p and +ve terminal to n
-ve terminal to p and –ve terminal to n
+ve terminal to p and +ve terminal to n
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